C636 transistor datasheet bookmarks

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Savantic semiconductor product specification silicon npn power transistors 2sc3150 description with to220c package high breakdown voltage. Bc636 datasheet, equivalent, cross reference search. The various options that a power transistor designer has are outlined. Fast shipping on all bipolar transistors orders within europe. B 23 zpackaging specifications zequivalent circuit tl emt3 smt3 sptumt3 dtc114ee dtc114em part no. Whatever your hev needs are, we have the knowhow and components to realize them to your specifications. Pinning pin description 1 emitter 2 collector 3 base 321 sym088 tr1 tr2 1 3 2 fig. The oc170 is an alloy diffused germanium pnp transistor it has a breakdown voltage of about 20 v and a maximum collector current of 10 ma. C636 datasheet, c636 pdf, c636 data sheet, c636 manual, c636 pdf, c636, datenblatt, electronics c636, alldatasheet, free, datasheet, datasheets, data sheet, datas.

Dtc114em dtc114ee dtc114eua dtc114eka dtc114esa 100ma. C636 2sc636 components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Nov 07, 2016 c4793 datasheet pdf npn transisotor toshiba, 2sc4793 datasheet, c4793 pdf, c4793 pinout, c4793 data, circuit, c4793 output, ic, schematic, substitute. Compare pricing for vishay bfc233920474 across 24 distributors and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart. Toshiba transistor silicon pnp epitaxial type pct process. Bc239 cross reference electronic circuits, tv schematics. Service manual sony ifektronix 371 a programmable high power curve. On special request, these transistors can be manufactured in different pin configurations.

Avr2112cie3, avr1912e2, avr1912ea, avr1912e1c, avr2112ci, avr1912. Bd9 80 v collector cut off current icbo vcb 30v, ie 0 0. Pnp silicon af transistors bc 636 datasheet catalog. Part number will be revised in case of specification change. Motorola order this document semiconductor technical data by bc636d high current transistors bc636 pnp silicon bc638 collector bc640 2 3 base 1 emitter 1 maximum ratings 2 3 bc bc bc 636 638 640 rating symbol unit case 2904, style 14 to92 to226aa collectoremitter voltage. Put your device numbers into the search field c transistor datasheet this page. C 10 emitter cut off current iebo veb 5v, ic 0 dc current gain hfe. Vcer 100 collectorbase voltage vcbo emitter base voltage vebo 5. Some of transistors and diodes are indicated in mark. B 33 zelectrical characteristic curves input voltage. C636 datasheet, c636 pdf, c636 data sheet, datasheet, data sheet, pdf. Beta is typically 150, f t about 60 mhz the oc170 was developed by philips and introduced in the late 1950s. The 2sa636k transistor might have a current gain anywhere between 120 and 250.

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